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 1SS133
Diodes
Switching diode
1SS133
!Applications High speed switching !External dimensions (Units : mm)
CATHODE BAND (YELLOW) 0.40.1
!Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability.
29.01.0
2.70.3
29.01.0
1.80.2
ROHM : MSD EIAJ : - JEDEC : DO-34
!Construction Silicon epitaxial planar
!Absolute maximum ratings (Ta=25C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65~+175 Unit V V mA mA mA mW
C C
!Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 0.5 2 4 Unit V A pF ns IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=50 Conditions
1/2
1SS133
Diodes
!Electrical characteristics curves (Ta=25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100 50
FORWARD CURRENT : IF (mA)
3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0
3000
100C
20 10 5 2 1 0.5 0.2 0
Ta=12 5C Ta=75 C Ta=25C Ta=-25 C
REVERSE CURRENT : IR (nA)
1000 300 100 30 10 3
75C
50C
Ta=25C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120
5
10
15
20
25
30
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals characteristics
5
REVERSE RECOVERY TIME : trr (ns)
100
VR=6V Irr=1/10IR
4
SURGE CURRENT : Isurge (A)
50
PULSE Single pulse
20 10 5
3
2
1
2 1 0.1
0
0
4
8
12
16
20
1
10
100
1000
10000
FORWARD CURRENT : IF (mA)
PULSE WIDTH : Tw (ms)
Fig.4 Reverse recovery time characteristics
Fig.5 Surge current characteristics
0.01F
D.U.T.
5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit
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